IRF9540SPBF Vishay, IRF9540SPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9540SPBF
• Description: MOSFET Power P-Chan 100V 19 Amp
• Manufacturer: Vishay

Specifications of IRF9540SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9540S, SiHF9540S
Vishay Siliconix
www.vishay.com
6
Fig. 12a - Unclamped Inductive Test Circuit
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
Q
GS
GS
V
DS
Charge
Q
Q
GD
G
D.U.T.
R
D
91079_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
2000
1600
1200
-
+
800
400
V
DD
0
25
V
DD
Starting T
= - 25 V
50
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
12 V
V
I
Fig. 13b - Gate Charge Test Circuit
V
AS
150
DS
GS
Same type as D.U.T.
- 7.8 A
- 13 A
- 19 A
Current regulator
I
D
0.2 µF
175
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S10-1728-Rev. B, 02-Aug-10
Document Number: 91079
D.U.T.
I
D
V
DS
+
-
V
DS
V
DD