SUP65P06-20-E3 Vishay, SUP65P06-20-E3 Datasheet
SUP65P06-20-E3
Specifications of SUP65P06-20-E3
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SUP65P06-20-E3 Summary of contents
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... P-Channel 60-V (D-S), 175_C MOSFET V (V) r (W) (BR)DSS DS(on) –60 0.020 TO-220AB DRAIN connected to TAB Top View SUP65P06-20 Parameter Gate-Source Voltage Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
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... Pulsed Current a Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Notes: Pulse test; pulse width v 300 ms, duty cycle v 2 Guaranteed by design, not subject to production testing d. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Symbol Test Condition = –250 (BR)DSS –250 mA V ...
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... Drain-to-Source Voltage (V) DS Document Number: 70289 S-05111—Rev. C, 10-Dec- 0.030 0.025 T = –55_C C 0.020 25_C 125_C 0.015 0.010 0.005 0.000 80 100 C iss SUP/SUB65P06-20 Vishay Siliconix Transfer Characteristics 200 T = –55_C C 160 25_C 120 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) ...
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... Case Temperature (_C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –5 – www.vishay.com S FaxBack 408-970-5600 2-4 _ 100 100 125 150 175 500 100 10 1 0.1 125 150 175 0.1 –3 – ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...