SUP65P06-20-E3 Vishay, SUP65P06-20-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP65P06-20-E3
• Description: MOSFET Power 60V 65A 187W
• Manufacturer: Vishay

Specifications of SUP65P06-20-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70289
S-05111—Rev. C, 10-Dec-01
6000
5000
4000
3000
2000
1000
200
160
120
100
80
40
80
60
40
20
0
0
0
0
0
0
C
V
rss
GS
10
20
2
V
V
= 10, 9, 8 V
V
DS
DS
GS
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
Transconductance
20
Capacitance
40
4
C
30
oss
60
6
40
T
C
C
80
= –55_C
8
iss
50
125_C
_
25_C
7 V
6 V
5 V
4 V
100
10
60
0.030
0.025
0.020
0.015
0.010
0.005
0.000
200
160
120
80
40
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 65 A
25
On-Resistance vs. Drain Current
= 30 V
20
V
2
GS
Q
Transfer Characteristics
SUP/SUB65P06-20
50
g
– Gate-to-Source Voltage (V)
I
V
V
D
– Total Gate Charge (nC)
GS
GS
– Drain Current (A)
Gate Charge
40
= 10 V
= 20 V
4
T
75
C
25_C
= –55_C
Vishay Siliconix
100
60
6
125
www.vishay.com
80
125_C
8
150
100
175
10
2-3