SUP65P06-20-E3 Vishay, SUP65P06-20-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP65P06-20-E3
• Description: MOSFET Power 60V 65A 187W
• Manufacturer: Vishay

Specifications of SUP65P06-20-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUP/SUB65P06-20
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-4
0.01
0.1
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
2
1
0
10
–50
0
0.02
–5
0.05
Duty Cycle = 0.5
0.2
0.1
Maximum Avalanche and Drain Current
V
I
–25
On-Resistance vs. Junction Temperature
D
GS
25
= 30 A
= 10 V
T
0
J
T
vs. Case Temperature
50
C
Single Pulse
– Junction Temperature (_C)
– Case Temperature (_C)
25
10
75
50
–4
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
_
150
10
150
–3
Square Wave Pulse Duration (sec)
175
175
10
–2
500
100
0.1
10
1
0.1
100
10
1
Limited by r
0.3
Source-Drain Diode Forward Voltage
T
Single Pulse
V
C
DS
V
= 25_C
SD
T
J
– Drain-to-Source Voltage (V)
Safe Operating Area
DS(on)
0.3
10
= 150_C
– Source-to-Drain Voltage (V)
1
–1
0.6
10
S-05111—Rev. C, 10-Dec-01
0.9
Document Number: 70289
T
J
= 25_C
1
1.2
100
10 ms
100 ms
1 ms
10 ms
100 ms
dc
3
1.5