IRF9640SPBF Vishay, IRF9640SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF9640SPBF
• Description: MOSFET Power P-Chan 200V 11 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9640SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 38 ns
• Rise Time: 43 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
GS
GS
V
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
Reference to 25 °C, I
= - 10 V
= - 10 V
J
= 9.1 , R
= - 160 V, V
= 25 °C, I
V
V
V
V
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
DS
TYP.
GS
TEST CONDITIONS
= - 100 V, I
-
-
-
= - 50 V, I
F
= V
= - 200 V, V
= 0 V, I
V
V
= - 11 A, dI/dt = 100 A/μs
V
GS
DS
I
GS
D
S
D
GS
= -11 A, V
GS
= - 11 A, V
= 8.6 , see fig. 10
, I
= - 25 V,
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 μA
D
= - 250 μA
D
I
= - 6.6 A
D
GS
= - 11 A,
D
= 6.6 A
= - 1 mA
= 0 V
GS
DS
J
G
G
= 125 °C
= 0 V
= - 160 V,
b
b
MAX.
D
S
b
b
D
S
b
1.0
62
40
b
- 200
MIN.
- 2.0
4.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1728-Rev. C, 02-Aug-10
Document Number: 91087
- 0.20
TYP.
1200
370
250
4.5
7.5
2.9
81
14
43
39
38
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.50
- 5.0
- 11
- 44
300
7.1
3.6
S
44
27
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V