IRF9640SPBF Vishay, IRF9640SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9640SPBF
• Description: MOSFET Power P-Chan 200V 11 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9640SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 38 ns
• Rise Time: 43 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
www.vishay.com
4
91087_05
91087_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2400
2000
1600
1200
800
400
20
16
12
8
4
0
0
10
0
I
0
D
= - 11 A
- V
10
DS ,
Q
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= - 40 V
20
V
DS
V
C
C
C
= - 100 V
GS
iss
rss
oss
30
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
10
gs
gd
ds
= - 160 V
1
+ C
+ C
40
gd
gd
C
C
C
For test circuit
see figure 13
, C
iss
oss
rss
ds
50
Shorted
60
91087_07
91087_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
-1
1
2
0
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.0
1
2
- V
- V
1.0
SD
DS
150
Operation in this area limited
5
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
C
10
T
T
Single Pulse
2.0
C
J
by R
= 150 °C
= 25 °C
2
DS(on)
S10-1728-Rev. C, 02-Aug-10
5
3.0
25
Document Number: 91087
10
°
C
2
2
4.0
10
10
100
1
V
ms
GS
ms
µs
µs
= 0 V
5
5.0
10
3