IRF9640SPBF Vishay, IRF9640SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9640SPBF
• Description: MOSFET Power P-Chan 200V 11 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9640SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 38 ns
• Rise Time: 43 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91087
S10-1728-Rev. C, 02-Aug-10
Vary t
required I
91087_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
12
10
AS
91087_11
8
6
4
2
0
25
R
- 10 V
g
10
0.1
10
-2
1
V
10
DS
50
0.05
0.02
0.01
-5
D = 0.50
0.20
0.10
T
t
C
p
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
I
AS
D.U.T
0.01 Ω
L
10
100
-4
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Single Pulse
(Thermal Response)
125
+
-
10
t
V
150
-3
1
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
p
1
j
= P
D.U.T.
P
DM
DM
R
Vishay Siliconix
D
x Z
t
d(off)
t
V
1
1
thJC
/t
DS
2
t
+ T
2
t
f
+
-
www.vishay.com
C
10
V
V
DD
DD
5