SI4825DDY-T1-GE3 Vishay, SI4825DDY-T1-GE3 Datasheet

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SI4825DDY-T1-GE3

Manufacturer Part Number
SI4825DDY-T1-GE3
Description
MOSFET Power 30V 14.9A 5.0W 12.5mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SI4825DDY-T1-GE3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0125 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10.9 A
Power Dissipation
2700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
0.01ohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-25V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4825DDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
1 700
Part Number:
SI4825DDY-T1-GE3
Manufacturer:
ADI
Quantity:
1 308
Part Number:
SI4825DDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI4825DDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
Document Number: 68926
S-82484-Rev. A, 13-Oct-08
Ordering Information: Si4825DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 30
(V)
G
S
S
S
C
0.0125 at V
0.0205 at V
1
2
3
4
= 25 °C.
R
Top View
DS(on)
SO-8
GS
GS
(Ω)
= - 4.5 V
= - 10 V
J
= 150 °C)
a, c
8
7
6
5
P-Channel 30-V (D-S) MOSFET
D
D
D
D
I
- 14.9
- 11.6
D
(A)
d
A
Q
29.5 nC
= 25 °C, unless otherwise noted
g
(Typ.)
Steady State
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Load Switch
• Notebook Adaptor Switch
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
g
stg
Tested
®
Power MOSFET
Typical
G
38
20
P-Channel MOSFET
S
D
- 55 to 150
- 10.9
- 8.6
- 2.2
2.7
1.7
- 14.9
- 11.9
Limit
± 25
- 4.1
Maximum
- 30
- 60
- 20
5.0
3.2
20
a, b
a, b
a, b
a, b
Vishay Siliconix
a, b
46
25
Si4825DDY
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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SI4825DDY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4825DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4825DDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68926 S-82484-Rev. A, 13-Oct-08 New Product 1.5 2.0 2.5 4000 3200 2400 1600 800 Si4825DDY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4825DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0. °C J 0.06 ...

Page 5

... Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4825DDY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si4825DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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