SI4825DDY-T1-GE3 Vishay, SI4825DDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4825DDY-T1-GE3
• Description: MOSFET Power 30V 14.9A 5.0W 12.5mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4825DDY-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 2700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -25V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68926
S-82484-Rev. A, 13-Oct-08
0.030
0.025
0.020
0.015
0.010
0.005
60
48
36
24
12
10
0
8
6
4
2
0
0.0
0
0
I
D
= 10 A
On-Resistance vs. Drain Current
10
0.5
12
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
20
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
1.0
24
V
V
GS
GS
V
V
DS
30
GS
= 4.5 V
= 10 V
= 15 V
V
= 10 thru 4 V
V
DS
DS
1.5
36
= 20 V
= 10 V
40
V
V
GS
GS
2.0
48
= 3 V
= 1 V, 2 V
50
New Product
60
2.5
60
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
I
D
On-Resistance vs. Junction Temperature
= - 10 A
C
C
- 25
iss
C
rss
oss
V
1
5
T
T
V
T
GS
C
J
T
C
Transfer Characteristics
DS
0
C
= 125 °C
- Junction Temperature (°C)
= - 55 °C
- Gate-to-Source Voltage (V)
= 25 °C
- Drain-to-Source Voltage (V)
V
25
Capacitance
10
GS
2
= - 10 V
50
Vishay Siliconix
V
15
Si4825DDY
3
GS
75
= - 4.5 V
100
www.vishay.com
20
4
125
150
25
5
3