SI4825DDY-T1-GE3 Vishay, SI4825DDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4825DDY-T1-GE3
• Description: MOSFET Power 30V 14.9A 5.0W 12.5mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4825DDY-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 2700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -25V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4825DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.001
0.01
0.8
0.6
0.4
0.2
0.0
100
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
T
J
0.4
J
- Temperature (°C)
= 150 °C
25
0.6
50
0.01
75
100
0.1
10
0.8
1
T
0.01
J
I
D
= 25 °C
100
= 250 µA
Limited by R
* V
I
D
GS
1.0
= 5 mA
125
> minimum V
V
Single Pulse
0.1
T
DS
New Product
A
DS(on)
= 25 °C
150
- Drain-to-Source Voltage (V)
1.2
Safe Operating Area
*
GS
at which R
1
DS(on)
BVDSS
0.10
0.08
0.06
0.04
0.02
0.00
170
136
102
10
68
34
0
is specified
0
0 .
0
0
On-Resistance vs. Gate-to-Source Voltage
1
10 ms
100 ms
1 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
100
2
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
T
S-82484-Rev. A, 13-Oct-08
Document Number: 68926
J
= 125 °C
6
T
1
I
D
J
= 25 °C
= 10 A
8
10
1
0