SI7137DP-T1-GE3 Vishay, SI7137DP-T1-GE3 Datasheet

MOSFET Power 20V 60A 104W

SI7137DP-T1-GE3

Manufacturer Part Number
SI7137DP-T1-GE3
Description
MOSFET Power 20V 60A 104W
Manufacturer
Vishay
Datasheet

Specifications of SI7137DP-T1-GE3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0031 Ohms
Forward Transconductance Gfs (max / Min)
95 S
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 60 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO-8
Continuous Drain Current Id
-60A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
2.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1.4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Quantity:
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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69063
S09-0865-Rev. D, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
8
0.00195 at V
0.0025 at V
0.0039 at V
6.15 mm
D
7
D
R
DS(on)
Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
D
GS
GS
Bottom View
PowerPAK SO-8
GS
5
(Ω)
J
= - 2.5 V
= - 4.5 V
D
= - 10 V
= 150 °C)
a, c
1
P-Channel 20-V (D-S) MOSFET
S
2
S
I
- 60
- 60
- 60
D
(A)
3
d
d
d
S
5.15 mm
4
e, f
G
A
Q
183 nC
= 25 °C, unless otherwise noted
g
(Typ.)
Steady State
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Adaptor Switch
• Battery Switch
• Load Switch
Definition
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
Tested
®
Gen III P-Channel Power MOSFET
Typical
0.9
15
G
P-Channel MOSFET
- 55 to 150
- 33.7
- 5.6
6.25
- 42
4.0
Limit
- 100
- 60
- 60
- 60
± 12
66.6
Maximum
- 20
- 50
125
104
260
S
D
a, b
a, b
a, b
a, b
d
d
a, b
d
1.2
Vishay Siliconix
20
Si7137DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7137DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7137DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 69063 S09-0865-Rev. D, 18-May- 1.5 2.0 2.5 28 000 400 GS 16 800 200 5600 = 1 1.3 1.1 0.9 0.7 0.5 240 320 400 Si7137DP Vishay Siliconix ° ° 125 ° 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si7137DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.010 0.008 °C J 0.006 0.004 ...

Page 5

... Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7137DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si7137DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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