SI7137DP-T1-GE3 Vishay, SI7137DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7137DP-T1-GE3
• Description: MOSFET Power 20V 60A 104W
• Manufacturer: Vishay

Specifications of SI7137DP-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0031 Ohms
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69063
S09-0865-Rev. D, 18-May-09
0.0040
0.0034
0.0028
0.0022
0.0016
0.0010
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
I
V
D
DS
= 20 A
V
On-Resistance vs. Drain Current
= 20 V
GS
0.5
16
80
V
= 10 V thru 3 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
D
- Total Gate Charge (nC)
V
Gate Charge
- Drain Current (A)
DS
160
1.0
32
= 15 V
V
V
DS
GS
240
1.5
= 10 V
48
= 10 V
V
V
GS
V
GS
GS
= 4.5 V
= 2.5 V
2.0
320
64
= 2 V
2.5
400
80
28 000
22 400
16 800
11 200
5600
1.5
1.3
1.1
0.9
0.7
0.5
10
8
6
4
2
0
0
- 50
0.0
0
T
C
On-Resistance vs. Junction Temperature
C
I
= 125 °C
D
- 25
rss
= - 25 A
T
C
0.6
T
V
C
= 25 °C
DS
V
T
= - 55 °C
GS
5
0
J
Transfer Characteristics
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
Capacitance
C
C
25
oss
V
1.2
iss
GS
= 10 V
10
50
Vishay Siliconix
1.8
75
Si7137DP
www.vishay.com
100
15
2.4
V
GS
125
= 2.5 V
3.0
150
20
3