SI7137DP-T1-GE3 Vishay, SI7137DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7137DP-T1-GE3
• Description: MOSFET Power 20V 60A 104W
• Manufacturer: Vishay

Specifications of SI7137DP-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0031 Ohms
• Forward Transconductance Gfs (max / Min): 95 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69063
S09-0865-Rev. D, 18-May-09
125
100
75
50
25
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
180
144
108
100
72
36
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
0
125
Package Limited
25
T
150
C
- Case Temperature (°C)
Current Derating*
50
75
100
3.0
2.4
1.8
1.2
0.6
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si7137DP
www.vishay.com
125
150
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