IRF9Z34SPBF Vishay, IRF9Z34SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF9Z34SPBF
• Description: MOSFET Power P-Chan 60V 18 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9Z34SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.14Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRF9Z34,SiHF9Z34 data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
/T
J
T
V
V
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
R
= 25 °C, I
V
T
DS
g
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= - 10 V
= - 10 V
J
= 12 , R
= 25 °C, I
= - 48 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
DS
DD
DS
TYP.
GS
TEST CONDITIONS
DS
F
-
-
= - 25 V, I
= - 30 V, I
= V
= 0 V, I
= - 60 V, V
= - 18 A, dI/dt = 100 A/μs
V
V
D
V
GS
DS
S
GS
I
GS
D
= 1.5 , see fig. 10
GS
= - 18 A, V
, I
= - 25 V,
= ± 20 V
= - 18 A, V
see fig. 6 and 13
= 0 V,
D
D
= 0 V, T
= - 250 μA
= - 250 μA
D
D
I
D
GS
= - 11 A
= - 18 A,
D
= - 11 A
= 0 V
= - 1 mA
J
GS
DS
= 150 °C
G
c
= 0 V
c
= - 48 V,
b
b, c
c
b, c
MAX.
b
D
S
1.7
40
b, c
MIN.
- 2.0
- 60
5.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1728-Rev. B, 02-Aug-10
Document Number: 91093
- 0.06
TYP.
1100
620
100
120
100
280
18
20
58
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.14
- 6.3
- 18
- 72
200
520
9.9
S
34
16
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nC
nA
μA
pF
ns
ns

S
A
V
V
V