IRF9Z34SPBF Vishay, IRF9Z34SPBF Datasheet - Page 7

• Manufacturer Part Number: IRF9Z34SPBF
• Description: MOSFET Power P-Chan 60V 18 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9Z34SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.14Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data,
Document Number: 91093
S10-1728-Rev. B, 02-Aug-10
see www.vishay.com/ppg?91093.
Re-applied
voltage
Reverse
recovery
current
+
-
R
g
D.U.T.
Note
• Compliment N-Channel of D.U.T. for driver
a. V
Note
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Fig. 14 - For P-Channel
Ripple ≤ 5 %
Period
Body diode forward
+
-
• dV/dt controlled by R
• I
• D.U.T. - device under test
current
SD
Diode recovery
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
dI/dt
D =
-
g
Period
P.W.
+
I
V
V
SD
GS
DD
= - 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
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