IRF9Z34 Vishay, IRF9Z34 Datasheet
IRF9Z34
Specifications of IRF9Z34
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IRF9Z34 Summary of contents
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... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 Ω -18 A (see fig. 12 ≤ 175 °C. J This datasheet is subject to change without notice. IRF9Z34, SiHF9Z34 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT ± 0.59 W/°C E ...
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... IRF9Z34, SiHF9Z34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... C 2.5 2.0 1.5 - 4.5 V 1.0 0.5 20 µs Pulse Width T = 175 ° 91092_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF9Z34, SiHF9Z34 Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
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... IRF9Z34, SiHF9Z34 Vishay Siliconix 2000 MHz iss rss gd 1600 oss ds 1200 800 400 Drain-to-Source Voltage ( 91092_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91092_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... R Fig. 10a - Switching Time Test Circuit 150 175 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF9Z34, SiHF9Z34 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) d(off) ...
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... IRF9Z34, SiHF9Z34 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91092_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... D • D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For P-Channel This datasheet is subject to change without notice. IRF9Z34, SiHF9Z34 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...
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... F H(1) J(1) L L(1) Ø ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 Note * 1.62 mm (dimension including protrusion) Heatsink hole for HVM C J(1) Package Information Vishay Siliconix MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.25 4.65 0.167 0.183 0.69 1.01 0.027 0.040 1.20 1.73 ...
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