ZVN4206GTA Diodes Inc, ZVN4206GTA Datasheet
ZVN4206GTA
Manufacturer Part Number
ZVN4206GTA
Description
MOSFET Power N-Chnl 60V
Manufacturer
Diodes Inc
Datasheet
1.ZVN4206GTC.pdf
(4 pages)
Specifications of ZVN4206GTA
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZVN4206GTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
FEATURES
*
*
*
*
*
APPLICATIONS
*
*
*
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Compact geometry
Fast switching speeds
No secondary breakdown and Excellent temperature stability
High input impedance and low current drive
Ease of parralleling
DC-DC converters
Solenoid / relay drivers for automotive applications
Stepper motor drivers and Print head drivers
amb
=25°C
amb
ZVN4206
=25°C
3 - 401
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
stg
-55 to +150
VALUE
60
1
8
2
ZVN4206G
20
D
G
UNIT
°C
W
V
A
A
V
D
S
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ZVN4206GTA Summary of contents
Page 1
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * Compact geometry * Fast switching speeds * No secondary breakdown and Excellent temperature stability * High input impedance and low current drive * Ease of parralleling ...
Page 2
ZVN4206G ELECTRICAL CHARACTERISTICS (at T PARAMETER Drain-Source Breakdown Voltage BV Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) g Input Capacitance (2) Common Source Output Capacitance ...
Page 3
TYPICAL CHARACTERISTICS 10 V GS= 20V 16V 8 14V 12V Drain Source Voltage (Volts) DS Output Characteristics Gate Source ...
Page 4
ZVN4206G TYPICAL CHARACTERISTICS 1000 900 800 700 600 V 10V DS= 500 400 300 200 100 Drain Current (Amps) D Transconductance v drain current 200 160 120 ...