ZVN4206GTA Diodes Inc, ZVN4206GTA Datasheet - Page 2

• Manufacturer Part Number: ZVN4206GTA
• Description: MOSFET Power N-Chnl 60V
• Manufacturer: Diodes Inc

Specifications of ZVN4206GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Breakdown Voltage BV
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2) g
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
ZVN4206G
SYMBOL MIN.
V
I
I
I
R
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
3 - 402
60
1.3
3
300
amb
= 25°C unless otherwise stated).
MAX.
3
100
10
100
1
1.5
100
60
20
8
12
12
15
UNIT CONDITIONS.
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
=60V, V
=48V, V
=25V, V
=25V,I
=25V, V
= 20V, V
=10V, I
=5V, I
25V, I
D
D
GS
=0.5A
D
DS
=1.5A
GS
GS
GS
GS
D
=1.5A
=0V
=1.5A, V
= V
DS
=0V
=0V, T=125°C
=10V
=0V, f=1MHz
=0V
GS
GEN
=10V
(2)