ZVN4206GTA Diodes Inc, ZVN4206GTA Datasheet - Page 4

• Manufacturer Part Number: ZVN4206GTA
• Description: MOSFET Power N-Chnl 60V
• Manufacturer: Diodes Inc

Specifications of ZVN4206GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZVN4206G
1000
160
200
120
80
40
900
800
700
600
500
400
300
200
100
0
Capacitance v drain-source voltage
0
0
Transconductance v drain current
0
10
1
V
I
D
DS
2
- Drain Current (Amps)
20
-Drain Source Voltage (Volts)
3
V
30
DS=
4
10V
TYPICAL CHARACTERISTICS
40
5
50
6
7
60
C
C
C
iss
oss
rss
8
70
9
10
80
3 - 404
1000
Transconductance v gate-source voltage
900
800
700
600
500
400
200
100
300
12
14
10
16
0
8
6
4
2
0
Gate charge v gate-source voltage
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
1
I
V
D=
2
GS
1.5A
-Gate Source Voltage (Volts)
3
Q-Charge (nC)
4
V
V
DS=
5
DS
20V
=
10V
6
40V 60V
7
8
9
10