SI7860DP-T1-E3 Vishay, SI7860DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7860DP-T1-E3
• Description: MOSFET Small Signal 30V 18A 5.0W 8.0mohm @ 10V
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI7860DP-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: PowerPAK SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71854
S09-0222-Rev. E, 09-Feb-09
0.015
0.012
0.009
0.006
0.003
0.000
60
10
6
5
4
3
2
1
0
1
0.00
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
= 16 A
0.2
10
= 15 V
4
V
Q
T
SD
g
J
- Total Gate Charge (nC)
= 150 °C
-
0.4
V
Source-to-Drain Voltage (V)
I
Gate Charge
GS
D
- Drain Current (A)
20
8
= 4.5 V
0.6
12
30
0.8
V
GS
T
J
16
40
= 10 V
= 25 °C
1.0
1.2
20
50
0.040
0.032
0.024
0.016
0.008
0.000
2500
2000
1500
1000
2.00
1.75
1.50
1.25
1.00
0.75
0.50
500
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
= 16 A
rss
V
= 10 V
2
6
V
GS
T
DS
J
0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
25
Capacitance
12
oss
4
50
Vishay Siliconix
C
iss
18
6
75
Si7860DP
I
D
= 16 A
100
www.vishay.com
24
8
125
150
10
30
3