SI7860DP-T1-E3 Vishay, SI7860DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7860DP-T1-E3
• Description: MOSFET Small Signal 30V 18A 5.0W 8.0mohm @ 10V
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI7860DP-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: PowerPAK SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si7860DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71854.
www.vishay.com
4
- 0.3
- 0.6
- 0.9
0.6
0.3
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 4
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0
T
Threshold Voltage
I
D
J
= 250 µA
- Temperature (°C)
0.02
25
10
- 3
0.05
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
75
10
- 3
100
10
- 2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 1
10
- 2
200
160
120
80
40
0
0.001
1
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
- 1
JM
Time (s)
- T
t
0.1
1
A
S09-0222-Rev. E, 09-Feb-09
= P
t
2
Document Number: 71854
DM
Z
th
thJA
100
JA
t
t
1
2
(t)
= 125 °C
1
600
1
10