SIA921EDJ-T1-GE3 Vishay, SIA921EDJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA921EDJ-T1-GE3
• Description: MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SIA921EDJ-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.059 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70
• Module Configuration: Dual
• Continuous Drain Current Id: -4.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 59mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
10
10
8
6
4
2
0
1
- 50
0.0
0
I
D
- 25
Source-Drain Diode Forward Voltage
= 4.6 A
0.2
3
V
SD
0
Q
V
g
- Source-to-Drain Voltage (V)
DS
Threshold Voltage
T
- Total Gate Charge (nC)
0.4
J
= 10 V
25
- Temperature (°C)
T
Gate Charge
6
J
= 150 °C
50
0.6
9
75
V
0.8
DS
100
= 16 V
I
D
T
12
J
= 250 µA
= 25 °C
1.0
125
150
15
1.2
0.20
0.15
0.10
0.05
0.00
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
15
20
10
0.001
5
0
- 50
0
I
D
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
= 1 A; T
Single Pulse Power, Junction-to-Ambient
- 25
I
I
D
D
0.01
= 3.6 A
= 1 A; T
1
J
V
= 125 °C
GS
0
T
J
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
0.1
= 25 °C
25
2
Pulse (s)
50
I
S09-2310-Rev. B, 02-Nov-09
D
1
= 3.6 A; T
Document Number: 64734
V
I
D
3
GS
75
= 3.6 A; T
= 4.5 V
10
100
J
V
= 25 °C
GS
4
J
= 2.5 V
= 125 °C
100
125
150
5
1000