SIA921EDJ-T1-GE3 Vishay, SIA921EDJ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIA921EDJ-T1-GE3
• Description: MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SIA921EDJ-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.059 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70
• Module Configuration: Dual
• Continuous Drain Current Id: -4.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 59mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
12
10
8
6
4
2
0
0
25
D
T
Package Limited
C
is based on T
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
0.01
100
0.1
10
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
1
0.1
125
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
A
GS
Limited by R
= 25 °C
> minimum V
V
150
DS
- Drain-to-Source Voltage (V)
1
DS(on)
GS
BVDSS Limited
*
at which R
DS(on)
10
8
6
4
2
0
is specified
25
100 µs
10 ms
1 ms
100 ms
1 s, 10 s
DC
100
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA921EDJ
www.vishay.com
125
150
5