S29GL128P11TFI020 Spansion Inc., S29GL128P11TFI020 Datasheet - Page 56
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S29GL128P11TFI020
Manufacturer Part Number
S29GL128P11TFI020
Description
Flash 3V 128Mb Mirrorbit lowest address110ns
Manufacturer
Spansion Inc.
Specifications of S29GL128P11TFI020
Memory Type
NOR
Memory Size
128 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Sectored
Interface Type
Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S29GL128P11TFI020
Manufacturer:
SPANSION
Quantity:
1 133
Part Number:
S29GL128P11TFI020
Manufacturer:
SPANSION
Quantity:
20 000
Notes
1. Not 100% tested.
2. See
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
6. Write Cycle Time = Access Time at V
54
t
t
JEDEC
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
WHDX
GHWL
WHEH
WLWH
WLAX
DVWH
WHDL
AVWL
ELWL
11.7.3
AVAV
V
IO
Parameter
= V
Section 11.6
CC
t
t
WHWH1
WHWH2
t
t
= 2.7 V. AC specifications for 110 ns speed options are tested with V
t
t
GHWL
t
t
CEPH
OEPH
t
t
Std.
t
BUSY
t
t
t
WPH
t
ASO
t
AHT
t
t
t
t
VHH
VCS
SEA
WC
WP
DH
CH
AS
AH
DS
CS
S29GL-P Erase and Program Operations
for more information.
Description
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
V
V
Erase/Program Valid to RY/BY# Delay
Command Cycle Timout
HH
CC
RESET#
Rise and Fall Time
Setup Time
CE#
V
V
CC
IO
CC
.
(Note 1)
(Note 1)
V
V
CC
IO
(Note 2)
Table 11.6 S29GL-P Erase and Program Operations
min
min
(Note 2)
(Note 1)
D a t a
S29GL-P MirrorBit
Figure 11.8 Power-up Sequence Timings
S h e e t
(Note 2)
t
VCS
t
VIOS
( A d v a n c e
IO
TM
= 1.8 V and V
Flash Family
Per Word
Per Word
Word
Word
CC
= 3.0 V.
t
I n f o r m a t i o n )
RH
Unit
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
Min
Min
(Note 6)
110
110
Speed Options
S29GL-P_00_A3 November 21, 2006
13.5
120
120
480
250
0.5
20
20
35
50
15
45
45
30
15
60
54
35
90
0
0
0
0
0
0
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
µs
ns
µs