BD2270HFV-TR Rohm Semiconductor, BD2270HFV-TR Datasheet

MOSFET & Power Driver ICs MOSFET Controller IC For Load Switching

BD2270HFV-TR

Manufacturer Part Number
BD2270HFV-TR
Description
MOSFET & Power Driver ICs MOSFET Controller IC For Load Switching
Manufacturer
Rohm Semiconductor
Type
MOSFET Controller ICr
Datasheets

Specifications of BD2270HFV-TR

Package / Case
HVSOF-5
Product
MOSFET Gate Drivers
Rise Time
130 us
Fall Time
18 us
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Supply Current
50 uA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 25 C
Output Voltage
9.5 V
Primary Input Voltage
5.5V
No. Of Outputs
1
Voltage Regulator Case Style
HVSOF
No. Of Pins
5
Operating Temperature Range
-25°C To +85°C
Svhc
No SVHC (18-Jun-2010)
Base
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BD2270HFV-TR
Quantity:
29 950
Power Management Switch IC Series for PCs and Digital Consumer Product
MOSFET Controller IC
for Load Switching
●Description
●Features
●Applications
●Absolute Maximum Ratings
●Operating Conditions
© 2009 ROHM Co., Ltd. All rights reserved.
www.rohm.com
BD2270HFV
Supply voltage
AEN voltage
DISC voltage
GATE voltage
Storage temperature range
Power dissipation
Operating voltage range
Operating temperature range
The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge
pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel
MOSFET drive without using any external parts.
In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up
sequence. The space saving type of HVSOF5 package is used.
1)
2)
3)
4)
5)
6)
7)
8)
PCs, PC peripheral devices, digital consumer electronics, etc.
*1 When mounted on a 70 mm70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta25C
*2 This IC is not designed to be radiation-proof.
Built-in charge pump
Built-in discharge circuit for output charge
Soft start circuit
Built-in comparator with hysteresis function at control input terminal
Compact HVSOF5 package
Operating current 50μA
Standby current 5μA
Possible to drive N-channel power MOSFET
Parameter
Parameter
Symbol
T
V
Symbol
V
OPR
V
V
T
CC
V
GATE
DISC
Pd
STG
AEN
CC
1/12
2.7 ~ 5.5
-25 ~ 85
-0.3 ~ 15.0
Limits
-0.3 ~ 6.0
-0.3 ~ 6.0
-0.3 ~ 6.0
-55 ~ 150
Limits
669
*1
2009.04 - Rev.A
No.09029EAT01
Unit
Unit
mW
°C
°C
V
V
V
V
V

Related parts for BD2270HFV-TR

BD2270HFV-TR Summary of contents

Page 1

... BD2270HFV ●Description The BD2270HFV with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel MOSFET drive without using any external parts. ...

Page 2

... GATE 6 8 130 750 OFF - 200 300 DISC GATE VCC DISC AEN GND ON/OFF BD2270HFV Fig.1 Measurement Circuit V AENH T ON2 T ON1 V + +1V CC Fig.2 Timing Diagram 2/12 Technical Note Condition μ 2.5V AEN μ AEN V High level input ...

Page 3

... BD2270HFV ●Reference Data 140 Ta=25°C 120 100 SUPPLY VOLTAGE : V [V] CC Fig.3 Operating Current AEN Enable 14 V =3. - 100 AMBIENT TEMPERATURE : Ta[ ℃ ] Fig.6 Standby Current AEN Disable 10.0 Ta=25°C 8.0 6.0 4.0 2.0 0 SUPPLY VOLTAGE : V [V] CC Fig.9 AEN Input Current 14 V =3.0V ...

Page 4

... BD2270HFV 200 Ta=25°C, C =500pF GATE 160 120 SUPPLY VOLTAGE : V [V] CC Fig.15 GATE Rise Time 1 350 V =3.0V, C =500pF CC GATE 300 250 200 150 100 100 AMBIENT TEMPERATURE : Ta[℃] Fig.18 GATE Rise Time 2 100.0 V =5.0V CC 10.0 1.0 0 GATE VOLTAGE ABOVE SUPPLY : V ...

Page 5

... Fig.29 GATE Switch Rise Characteristics MOSFET : RTF025N03 RSS130N03 V V 3.3V IN_SWIT CH OUT_SWIT CH 1uF GATE VCC DISC ON/OFF AEN GND BD2270HFV Fig.31 Switch Rise / Fall Characteristics Measurement Circuit Diagram www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. V AEN (5V/div) V =3. =500pF GATE V GATE (2V/div) TIME (100μ ...

Page 6

... BD2270HFV ●Block Diagram GATE VCC Charge OSC Pump (x3) GND Control AEN Fig.32 Block Diagram ●Pin description PIN No. PIN name 1 VCC 2 GND 3 AEN 4 DISC 5 GATE ●I/O circuit Pin name AEN DISC GATE www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. DISC Function ...

Page 7

... GATE drive A voltage to drive the gate of N-channel MOSFET is generated by a built-in charge pump in the BD2270HFV. The built-in charge pump in the BD2270HFV generates a voltage three times as high as the power supply voltage at the GATE terminal. In addition, since this IC has a built-in capacitor for the charge pump, it needs no external parts. ...

Page 8

... A 5V load switch can be configured like the 3.3V load switch. However, if the external N-channel MOSFET is low VGSS, clamp it with Zener diode and the like. 3. Configuration of low-voltage load switch 1.2V 3.3V Providing BD2270HFV drive power supply enables configuration of a low-voltage load switch. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved ...

Page 9

... Soft start configuration 3.3V ON/OFF Connecting an external capacitor to the GATE terminal of the BD2270HFV makes it possible to slow the rise of the N-channel MOSFET, thus achieving reduction of the inrush current to the large-capacity capacitor mounted on the load side. ● Application Information This system connection diagram gives no warranty to the operation as application. ...

Page 10

... BD2270HFV ●Thermal Derating Characteristics (HVSOF5) 800 700 600 500 400 300 200 100 Mounted mm70 mm1.6 mm glass epoxy PCB Cautions on use (1) Absolute Maximum Ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc ...

Page 11

... BD2270HFV (5) GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (6) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs ...

Page 12

... BD2270HFV Order type name selection ROHM type name Part number 2270 HVSOF5 <Dimension> 1.6±0.05 0.8 0.3 1.0±0. 0.13±0. 0.22±0.05 0.5 (Unit:mm) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved Package type name taping type name TR: embossed reel tape HFV: HVSOF < ...

Page 13

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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