BUK763R6-40C,118 NXP Semiconductors, BUK763R6-40C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK763R6-40C,118
• Description: MOSFET N-CH 40V 100A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK763R6-40C,118

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5295-2

NXP Semiconductors
BUK763R6-40C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
0
Capped at 100 A due to package
I
D
(A)
10
10
10
10
-1
3
2
1
10
50
-1
100
Limit R
150
All information provided in this document is subject to legal disclaimers.
T
003aad365
mb
DSon
(°C)
= V
1
200
DS
Rev. 04 — 16 June 2010
/I
D
Fig 2.
P
(%)
der
120
80
40
0
DC
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
10
50
BUK763R6-40C
V
DS
100
(V)
t
p
100 μs
1 ms
10 ms
100 ms
= 10 μs
003aac911
150
10
© NXP B.V. 2010. All rights reserved.
2
T
mb
03na19
(°C)
200
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