BUK763R6-40C,118 NXP Semiconductors, BUK763R6-40C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK763R6-40C,118
• Description: MOSFET N-CH 40V 100A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK763R6-40C,118

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5295-2

NXP Semiconductors
BUK763R6-40C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
RDSon
(m Ω )
1.5
0.5
a
6.5
3.5
2
1
0
of gate voltage; typical values
-60
factor as a function of junction temperature
Drain-source on-state resistance as a function
8
5
2
4
0
8
60
12
120
16
All information provided in this document is subject to legal disclaimers.
V
T
003aac862
GS
j
03ne89
( ° C)
(V)
180
20
Rev. 04 — 16 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
GS(th)
R
(mΩ)
(V)
DSon
20
15
10
5
0
5
4
3
2
1
0
−60
junction temperature
of drain current; typical values
0
V
N-channel TrenchMOS standard level FET
GS
(V) = 4.5
0
4.8
60
BUK763R6-40C
5
60
max
min
typ
5.2
120
120
© NXP B.V. 2010. All rights reserved.
T
5.5
003aac820
j
5.8
I
(°C)
D
03aa32
10
(A)
20
180
180
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