PSMN5R8-30LL,115 NXP Semiconductors, PSMN5R8-30LL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN5R8-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R8-30LL,115

• Input Capacitance (ciss) @ Vds: 1316pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5593-2

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN5R8-30LL
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
003aae438
mb
(°C)
200
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
Rev. 2 — 18 August 2010
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≤ 150 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; unclamped; R
p
p
≤ 10 µs; T
≤ 10 µs; T
N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET
j
Fig 2.
≤ 150 °C
j
mb
mb
j(init)
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
P
Figure 2
(%)
= 25 °C; I
der
120
80
40
mb
mb
0
function of solder point temperature
Normalized total power dissipation as a
0
= 25 °C;
= 25 °C
GS
GS
D
= 20 kΩ
= 40 A;
= 50 Ω
Figure 1
Figure 1
50
PSMN5R8-30LL
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
003aab937
mb
150
150
260
Max
30
30
20
40
40
295
55
40
295
47
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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