PSMN5R8-30LL,115 NXP Semiconductors, PSMN5R8-30LL,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN5R8-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R8-30LL,115

• Input Capacitance (ciss) @ Vds: 1316pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5593-2

NXP Semiconductors
6. Characteristics
Table 6.
PSMN5R8-30LL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
I
see
I
see
I
see
I
see
V
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
= 25 °C; see
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 15 A; V
= 15 A; V
= 0 A; V
= 15 A; V
= 15 A; V
= 15 A; V
= 10 A; V
Figure 10
Figure
Figure 10
Figure 12
Figure 13
Figure 13
Figure
Figure
Figure
Figure
Figure 14
Figure
Figure 15
= 30 V; V
= 30 V; V
= 15 V; V
= 20 V; V
= -20 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 10 V; I
Rev. 2 — 18 August 2010
DS
11; see
12; see
14; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
DS
DS
DS
D
D
D
D
= 0 V; V
GS
GS
GS
DS
DS
= 10 A; T
= 10 A; T
= 10 A; T
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; see
= V
= V
= V
= 10 A; T
Figure 16
GS
GS
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 10
Figure 13
Figure 15
Figure 15
Figure 15
Figure 15
N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
GS
GS
= 10 V
j
j
j
j
= 150 °C;
= 25 °C;
= -55 °C;
= 100 °C;
= 150 °C;
= 25 °C;
j
= 25 °C;
= 25 °C
= 125 °C
= 25 °C
= 25 °C
j
j
Figure
= 10 V;
= 4.5 V;
= 10 V;
= 10 V;
= 10 V;
= -55 °C
= 25 °C
14;
PSMN5R8-30LL
Min
27
30
0.5
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.7
-
0.05
-
5
5
6.1
-
9
5
0.9
24
11.7
21.8
4.2
2.3
1.9
3.4
2.7
1316
283
142
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
2.15
2.6
1
50
100
100
8
7.7
10.4
5.8
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
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