PSMN016-100YS,115 NXP Semiconductors, PSMN016-100YS,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN016-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS,115

• Input Capacitance (ciss) @ Vds: 2744pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29.3 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 36 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5579-2

NXP Semiconductors
8. Revision history
Table 7.
PSMN016-100YS_3
Product data sheet
Document ID
PSMN016-100YS_3
Modifications:
PSMN016-100YS_2
PSMN016-100YS_1
Revision history
20100330
20100125
20100105
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Objective data sheet
Rev. 03 — 30 March 2010
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Change notice
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-
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PSMN016-100YS
Supersedes
PSMN016-100YS_2
PSMN016-100YS_1
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© NXP B.V. 2010. All rights reserved.
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