PSMN016-100YS,115 NXP Semiconductors, PSMN016-100YS,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN016-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS,115

• Input Capacitance (ciss) @ Vds: 2744pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29.3 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 36 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5579-2

NXP Semiconductors
PSMN016-100YS_3
Product data sheet
Fig 3.
(A)
I
10
10
10
D
10
-1
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
DC
Rev. 03 — 30 March 2010
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
10
2
t
100 μs
p
1 ms
10 ms
100 ms
= 100 μs
PSMN016-100YS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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