PSMN7R0-60YS,115 NXP Semiconductors, PSMN7R0-60YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN7R0-60YS,115
• Description: MOSFET N-CH 60V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS,115

• Input Capacitance (ciss) @ Vds: 2712pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 89A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.3 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 63 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5596-2

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
DSon
(V)
GS
10
10
9
8
7
6
5
4
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
20
12V
20
V
48V
GS
40
(V) = 5
60
40
V
Q
80
DS
All information provided in this document is subject to legal disclaimers.
003aae063
G
003aae061
= 30V
(nC)
I
D
5.5
6.5
10
(A)
8
6
100
60
Rev. 02 — 30 March 2010
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Drain-source on-state resistance as a function
(pF)
C
10
10
10
4
3
2
10
of drain current; typical values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN7R0-60YS
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003a a e 060
003aaa508
C
C
C
(V)
os s
is s
rs s
10
2
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