PSMN7R0-100XS NXP Semiconductors, PSMN7R0-100XS Datasheet

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C

PSMN7R0-100XS

Manufacturer Part Number
PSMN7R0-100XS
Description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
PSMN7R0-100XS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 2 — 21 October 2011
High efficiency due to low switching
and conduction losses
AC-to-DC power supply equipment
Motor control
Conditions
T
T
T
V
see
V
see
V
V
see
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
Figure
Figure
Figure 3
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; T
≤ 100 V; unclamped; R
12; see
14; see
j
D
D
≤ 175 °C
j(init)
GS
= 15 A; T
= 15 A; V
Figure 2
= 10 V; see
= 25 °C; I
Figure 13
Figure 15
j
DS
= 25 °C;
= 50 V;
D
GS
= 55 A;
Figure 1
= 50 Ω;
Isolated package
Suitable for standard level gate drive
Server power supplies
Synchronous rectification
Min
-
-
-
-
-
-
-
Preliminary data sheet
Typ
-
-
-
5.4
34
121
-
-
Max
100
55
57.7
6.8
-
420
Unit
V
A
W
mΩ
nC
nC
mJ

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PSMN7R0-100XS Summary of contents

Page 1

... PSMN7R0-100XS N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 — 21 October 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... SOT186A (TO-220F) Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS Graphic symbol mbb076 Version SOT186A © NXP B.V. 2011. All rights reserved. ...

Page 3

... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° ...

Page 4

... DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS 003aag574 (1) ( (ms) AL =10 μ 100 μ 100 (V) DS © NXP B.V. 2011. All rights reserved. ...

Page 5

... Conditions see Figure 5 vertical in free air - Conditions 50 Hz ≤ f ≤ 60 Hz; RH ≤ sinusoidal waveform; clean and dust free All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS Min Typ - 2. 003aag576 δ ...

Page 6

... MHz °C; see Figure 16; see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS Min Typ Max 100 - - 4 ...

Page 7

... V (V) DS Fig 7. 003aag579 120 I D (A) 100 80 120 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS Min Typ - 0. 167 Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... T (°C) j Fig 11. Sub-threshold drain current as a function of 003aag583 5.0 5.5 6.0 10 120 160 200 I (A) D Fig 13. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS − (A) min typ −2 10 −3 10 −4 10 −5 10 − ...

Page 9

... C C (pF) iss 10000 C oss C rss (V) DS Fig 17. Input and reverse transfer capacitances as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS (V) 80V 8 50V V = 20V charge; typical values ...

Page 10

... N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) 200 I S (A) 160 120 80 = 175 ° ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS 003aag588 1.2 1.6 V (V) SD © NXP B.V. 2011. All rights reserved ...

Page 11

... scale 0.7 15.8 6.5 10.3 2.7 2.54 5.08 0.4 15.2 6.3 9.7 1.7 REFERENCES JEDEC JEITA 3-lead TO-220F All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS mounting base ( max. 0.6 14.4 3.30 3.2 2.6 3 0.4 13.5 2.79 3.0 2.3 EUROPEAN PROJECTION SOT186A ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN7R0-100XS v.2 20111021 • Modifications: Various changes to content. PSMN7R0-100XS v.1 20110721 PSMN7R0-100XS Preliminary data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A) Data sheet status Preliminary data sheet Objective data sheet All information provided in this document is subject to legal disclaimers. ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 21 October 2011 PSMN7R0-100XS © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN7R0-100XS All rights reserved. Date of release: 21 October 2011 Document identifier: PSMN7R0-100XS ...

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