PSMN7R0-100ES NXP Semiconductors, PSMN7R0-100ES Datasheet
PSMN7R0-100ES
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PSMN7R0-100ES Summary of contents
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... PSMN7R0-100ES N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Rev. 03 — 23 February 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name PSMN7R0-100ES I2PAK PSMN7R0-100ES_3 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Quick reference Conditions drain-source on-state resistance T = 100 °C; see ...
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... V; unclamped sup GS 003aad558 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES Min - - -20 Figure 1 - [1] - Figure -55 - Ω ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN7R0-100ES_3 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES 003aad559 = 10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN7R0-100ES_3 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES Min Typ Max - 0.3 0. 003a a d560 t p δ ...
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... MHz see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES Min Typ 90 - 100 - Figure Figure Figure 0.08 ...
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... V ( (V) DS Fig 6. 003a a d572 150 200 250 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES Min Typ Figure 167 12000 C (pF) 10000 8000 6000 4000 2000 Input and reverse transfer capacitances as a function of gate-source voltage ...
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... (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 ...
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... I (A) D Fig 14. Gate-source voltage as a function of gate Q GD 003aaa508 Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES ( 100 charge; typical values ...
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... Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES 003a a d570 25 °C 0.9 1 © NXP B.V. 2010. All rights reserved ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2010. All rights reserved. ...
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... N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Data sheet status Change notice Product data sheet - Objective data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES Supersedes PSMN7R0-100ES_2 PSMN7R0-100ES_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 February 2010 PSMN7R0-100ES Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 23 February 2010 Document identifier: PSMN7R0-100ES_3 ...