PSMN2R7-30PL,127 NXP Semiconductors, PSMN2R7-30PL,127 Datasheet - Page 3
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PSMN2R7-30PL,127
Manufacturer Part Number
PSMN2R7-30PL,127
Description
MOSFET N-CH 30V TO220AB
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R7-30PL127.pdf
(15 pages)
Specifications of PSMN2R7-30PL,127
Input Capacitance (ciss) @ Vds
3954pF @ 12V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
66nC @ 10V
Power - Max
170W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
170 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5235
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN2R7-30PL
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
200
150
100
(A)
I
50
D
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
(1)
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aad358
mb
(°C)
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
Rev. 02 — 2 November 2010
200
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
Fig 2.
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
= 25 °C; I
P
(%)
der
mb
mb
120
80
40
0
= 25 °C; see
= 25 °C
function of mounting base temperature
Normalized total power dissipation as a
0
GS
D
= 20 kΩ
= 100 A;
Figure 1
Figure 1
50
Figure 3
PSMN2R7-30PL
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
175
Max
30
30
20
100
100
730
170
100
730
300
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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