PSMN2R7-30PL,127 NXP Semiconductors, PSMN2R7-30PL,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R7-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30PL,127

• Input Capacitance (ciss) @ Vds: 3954pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5235

NXP Semiconductors
PSMN2R7-30PL
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
(pF)
8000
6000
4000
2000
C
DSon
10
8
6
4
2
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Drain-source on-state resistance as a function
0
0
5
3
10
6
15
9
All information provided in this document is subject to legal disclaimers.
V
003aad410
003aad412
V
GS
GS
(V)
(V)
C
C
iss
rss
Rev. 02 — 2 November 2010
12
20
N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S)
g
10
10
10
10
10
10
180
150
120
(A)
I
fs
90
60
30
D
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
25
min
1
PSMN2R7-30PL
50
typ
2
75
© NXP B.V. 2010. All rights reserved.
V
GS
003aad411
003aab271
I
D
max
(V)
(A)
100
3
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