FDP12N60NZ Fairchild Semiconductor, FDP12N60NZ Datasheet - Page 2

• Manufacturer Part Number: FDP12N60NZ
• Description: MOSFET N-CH 600V 12A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDP12N60NZ

• Input Capacitance (ciss) @ Vds: 1676pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Power - Max: 240W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 13.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 240 W
• Mounting Style: Through Hole
• Fall Time: 60 ns
• Gate Charge Qg: 26 nC
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N60NZ / FDPF12N60NZ Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =7.85mH, I
3: I
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
FDPF12N60NZ
J
FDP12N60NZ
DSS
12A, di/dt 200A/s, V
AS
= 12A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
FDPF12N60NZ
BV
FDP12N60NZ
G
DSS
Device
= 25, Starting T
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 25
= 600V, V
= 480V, T
= 0V, I
= ±30V, V
= 20V, I
= 25V, V
= 480V, I
= 300V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
SD
D
Reel Size
D
= 25
D
GS
GS
D
D
= 6A
= 12A
= 12A
GS
C
= 6A
DS
= 250A
= 12A
= 12A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
600
-
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1260
Typ.
0.53
13.5
350
150
2.2
0.6
25
50
80
60
12
26
10
6
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
1676
0.65
170
130
±10
200
110
1.4
60
10
18
34
12
48
1
50
50
-
-
5
-
-
-
-
-
Units
V/
nC
nC
nC
A
A
pF
pF
pF
ns
ns
ns
ns
ns
C
V

A
A
V
V
S
o
C