FDP12N60NZ Fairchild Semiconductor, FDP12N60NZ Datasheet - Page 8

• Manufacturer Part Number: FDP12N60NZ
• Description: MOSFET N-CH 600V 12A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDP12N60NZ

• Input Capacitance (ciss) @ Vds: 1676pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Power - Max: 240W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 13.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 240 W
• Mounting Style: Through Hole
• Fall Time: 60 ns
• Gate Charge Qg: 26 nC
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
TO-220
FDP12N60NZ / FDPF12N60NZ Rev. A
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