FDP12N60NZ Fairchild Semiconductor, FDP12N60NZ Datasheet - Page 5

• Manufacturer Part Number: FDP12N60NZ
• Description: MOSFET N-CH 600V 12A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDP12N60NZ

• Input Capacitance (ciss) @ Vds: 1676pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Power - Max: 240W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 13.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 240 W
• Mounting Style: Through Hole
• Fall Time: 60 ns
• Gate Charge Qg: 26 nC
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N60NZ / FDPF12N60NZ Rev. A
0.001
0.001
0.01
0.01
0.1
0.1
1
5
1
10
10
0.01
-5
-5
Single pulse
Single pulse
0.1
0.05
0.2
0.1
0.05
0.02
0.5
0.2
0.02
0.01
0.5
10
10
-4
-4
Figure 12. Transient Thermal Response Curve
Figure 13. Transient Thermal Response Curve
10
10
-3
-3
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
10
10
-FDPF12N60NZ
-2
-2
-FDP12N60NZ
5
10
10
-1
-1
1
1
* Notes :
* Notes :
1. Z
2. Duty Factor, D=t
3. T
1. Z
2. Duty Factor, D=t
3. T
P
D M


JM
JM
JC
P
JC
10
10
D M
- T
- T
(t) = 3.2
(t) = 0.52
C
C
t
1
= P
= P
t
2
t
o
DM
1
DM
C/W Max.
t
o
2
C/W Max.
10
10
* Z
* Z
1
1
2
2
/t
/t


2
JC
2
JC
(t)
(t)
10
10
3
3
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