PSMN9R0-30LL,115 NXP Semiconductors, PSMN9R0-30LL,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN9R0-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-30LL,115

• Input Capacitance (ciss) @ Vds: 1193pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 20.6nC @ 10V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5597-2

NXP Semiconductors
PSMN9R0-30LL
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Gate-source voltage as a function of gate charge; typical values
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
V
(V)
GS
10
10
8
6
4
2
0
0
V
All information provided in this document is subject to legal disclaimers.
DS
003aae134
C
(V)
C
C
oss
iss
rss
5
6V
24V
10
2
Rev. 04 — 7 July 2010
10
15
Fig 16. Source (diode forward) current as a function of
N-channel QFN3333 30 V 9 mΩ logic level MOSFET
V
DS
= 15V
(A)
I
S
20
30
20
10
0
003aae137
source-drain (diode forward) voltage; typical
values
Q
0
G
(nC)
25
0.3
T
j
= 150 °C
PSMN9R0-30LL
0.6
T
0.9
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
003aae138
V
SD
(V)
1.2
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