psmn9r0-30kl NXP Semiconductors, psmn9r0-30kl Datasheet
psmn9r0-30kl
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psmn9r0-30kl Summary of contents
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... PSMN9R0-30KL N-channel mΩ logic-level MOSFET in SO8 Rev. 01 — 14 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment 1 ...
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... unclamped; R Simplified outline 8 1 SOT96-1 (SO8) Description plastic small outline package; 8 leads; body width 3.9 mm All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL Min = see Figure 14; - Figure ...
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... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN9R0-30KL Objective data sheet D 1 All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL N-channel mΩ logic-level MOSFET in SO8 =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN9R0-30KL Objective data sheet N-channel mΩ logic-level MOSFET in SO8 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL Min Typ - 24 003aaf981 © ...
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... Figure see Figure D DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL Min Typ Max = -55 ° ° 1.3 1.7 2. 2.55 0.5 - ...
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... GS DS 003aaf982 (A) 2 2.6 5 2.4 V ( (V) DS Fig 6. function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL Min Typ = 0. ° 150 ° ...
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... V (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL 003aaf985 MHz DS 003aab271 min typ © NXP B.V. 2011. All rights reserved. ...
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... T Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003aaf978 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL 003aaf987 V (V) = 2.8 GS 3.5 4.0 4.5 10 25°C ...
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... Fig 16. Input, output and reverse transfer capacitances ( 150 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL (pF MHz function of drain-source voltage; typical ...
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... REFERENCES JEDEC JEITA MS-012 All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL N-channel mΩ logic-level MOSFET in SO8 θ detail ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN9R0-30KL v.1 20110414 PSMN9R0-30KL Objective data sheet N-channel mΩ logic-level MOSFET in SO8 Data sheet status Change notice Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2011 PSMN9R0-30KL Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 April 2011 Document identifier: PSMN9R0-30KL ...