PSMN7R0-40LS,115 NXP Semiconductors, PSMN7R0-40LS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-40LS,115
• Description: MOSFET N-CH 40V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-40LS,115

• Input Capacitance (ciss) @ Vds: 1286pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21.4nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5595-2

NXP Semiconductors
Table 6.
PSMN5R8-40YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
100
fs
D
100
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
0.5
20
7
6.5
6
…continued
40
1
1.5
60
V
GS
All information provided in this document is subject to legal disclaimers.
V
003aae225
003aae223
(V) = 4.5
I
DS
D
(A)
(V)
5.5
5
Rev. 03 — 25 October 2010
80
Conditions
I
see
I
V
2
S
S
GS
= 15 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 20 V
(A)
(pF)
I
D
C
4000
2000
100
75
50
25
0
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
j
0
0
= 25 °C;
3
2
PSMN5R8-40YS
T
Min
-
-
-
j
= 175 °C
6
4
Typ
0.82
33
30
9
© NXP B.V. 2010. All rights reserved.
V
T
GS
V
003aae224
j
003aae226
= 25 °C
GS
(V)
Max
1.2
-
-
(V)
C
C
rss
iss
12
6
Unit
V
ns
nC
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