BUK655R0-75C,127 NXP Semiconductors, BUK655R0-75C,127 Datasheet

MOSFET N-CH TRENCH SOT78A

BUK655R0-75C,127

Manufacturer Part Number
BUK655R0-75C,127
Description
MOSFET N-CH TRENCH SOT78A
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK655R0-75C127.pdf (14 pages)

Specifications of BUK655R0-75C,127

Input Capacitance (ciss) @ Vds
11400pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
177nC @ 10V
Power - Max
263W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
263 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK655R0-75C
N-channel TrenchMOS FET
Rev. 02 — 14 October 2010
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
12 V, 24 V and 42 V Automotive
systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
4.6
Max Unit
75
120
263
5.3
V
A
W
mΩ

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BUK655R0-75C,127 Summary of contents

Page 1

... BUK655R0-75C N-channel TrenchMOS FET Rev. 02 — 14 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... see GS see Figure 14 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET Min Typ ≤ sup = 46 Figure 13; Graphic symbol D G ...

Page 3

... Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 Figure 553 - 263 ...

Page 4

... Product data sheet 003aac793 P (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET 120 der 100 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ms 2 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK655R0-75C Product data sheet Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET Min Typ Max - - 0. 003aae427 t p δ ...

Page 6

... R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET Min Typ Max 1.8 2.3 2.8 ...

Page 7

... I D (A) 160 120 (V) GS Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET Min Typ - 0. 153 003aae756 6.0 5.0 V ( 0.5 1 1.5 ...

Page 8

... V (V) = 4.5 GS 5.0 6.0 10.0 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET 4 V GS(th) (V) 3 max @1mA 2 typ @1mA min @2.5mA junction temperature ...

Page 9

... Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae431 (A) C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET ( 100 charge; typical values 160 I S ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK655R0-75C v.2 20101014 • Modifications: Status changed from objective to product. • Various changes to content. BUK655R0-75C v.1 20100706 BUK655R0-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK655R0-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 October 2010 Document identifier: BUK655R0-75C ...

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