BUK655R0-75C,127 NXP Semiconductors, BUK655R0-75C,127 Datasheet - Page 11

• Manufacturer Part Number: BUK655R0-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK655R0-75C,127

• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
8. Revision history
Table 7.
BUK655R0-75C
Product data sheet
Document ID
BUK655R0-75C v.2
Modifications:
BUK655R0-75C v.1
Revision history
20100706
Release date
20101014
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•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 October 2010
Data sheet status
Product data sheet
Objective data sheet
Change notice
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BUK655R0-75C
N-channel TrenchMOS FET
Supersedes
BUK655R0-75C v.1
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© NXP B.V. 2010. All rights reserved.
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