STL11N3LLH6 STMicroelectronics, STL11N3LLH6 Datasheet

MOSFET N-CH 30V 11A POWERFLAT

STL11N3LLH6

Manufacturer Part Number
STL11N3LLH6
Description
MOSFET N-CH 30V 11A POWERFLAT
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet

Specifications of STL11N3LLH6

Input Capacitance (ciss) @ Vds
1690pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Power - Max
2W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
11 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
17 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-11099-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL11N3LLH6
Manufacturer:
EPCOS
Quantity:
1 400
Part Number:
STL11N3LLH6
Manufacturer:
ST
0
Part Number:
STL11N3LLH6
Manufacturer:
ST
Quantity:
20 000
Features
1. The value is rated according R
Application
Switching applications
Description
This product is a 30 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
R
Table 1.
September 2010
DS(on)
STL11N3LLH6
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Order code
DS(on)
STL11N3LLH6
Order code
in all packages.
* Q
Device summary
g
industry benchmark
N-channel 30 V, 0.006 Ω, 11 A PowerFLAT™ (3.3 x 3.3)
V
30 V
DSS
thj-pcb
0.0075 Ω
R
max.
DS(on)
STripFET™ VI DeepGATE™ Power MOSFET
DS(on)
Marking
11N3L
11 A
Doc ID 17755 Rev 1
I
D
(1)
PowerFLAT™ (3.3 x 3.3)
Figure 1.
Package
PowerFLAT™ (3.3 x 3.3)
Internal schematic diagram
STL11N3LLH6
Tape and reel
Packaging
www.st.com
1/10
10

Related parts for STL11N3LLH6

STL11N3LLH6 Summary of contents

Page 1

... Order code STL11N3LLH6 September 2010 STripFET™ VI DeepGATE™ Power MOSFET R DS(on max. 0.0075 Ω ( DS(on) Figure 1. Marking 11N3L PowerFLAT™ (3.3 x 3.3) Doc ID 17755 Rev 1 STL11N3LLH6 PowerFLAT™ (3.3 x 3.3) Internal schematic diagram Package Packaging Tape and reel 1/10 www.st.com 10 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/ Doc ID 17755 Rev 1 STL11N3LLH6 ...

Page 3

... STL11N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (3) P Total dissipation at T TOT (1) P Total dissipation at T TOT Derating factor T Operating junction temperature J Storage temperature ...

Page 4

... 4 (see Figure 3) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Parameter Test conditions 4.7 Ω (see Figure 2) Doc ID 17755 Rev 1 STL11N3LLH6 Min. Typ. Max ± = 250 µ 5.5 A 0.006 0.0075 D = 5.5 A 0.0084 0.0095 D Min. Typ. Max. 1690 290 176 ...

Page 5

... STL11N3LLH6 Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% ...

Page 6

... Figure 5. 3.3 1000 µF µ AM01470v1 Figure 7. V (BR)DSS 10% 0 AM01472v1 Doc ID 17755 Rev 1 STL11N3LLH6 Gate charge test circuit 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ Unclamped inductive load test circuit 2200 3.3 µ ...

Page 7

... STL11N3LLH6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17755 Rev 1 Package mechanical data ® 7/10 ...

Page 8

... Doc ID 17755 Rev 1 STL11N3LLH6 inch MIN. TYP. MAX. 0.031 0.035 0.039 0.0007 0.0019 0.007 0.009 0.011 0.015 0.012 0.004 0.13 0.098 0.104 0.108 ...

Page 9

... STL11N3LLH6 5 Revision history Table 9. Document revision history Date 02-Sep-2010 Revision 1 First release Doc ID 17755 Rev 1 Revision history Changes 9/10 ...

Page 10

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17755 Rev 1 STL11N3LLH6 ...

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