STL11N3LLH6 STMicroelectronics, STL11N3LLH6 Datasheet - Page 8

• Manufacturer Part Number: STL11N3LLH6
• Description: MOSFET N-CH 30V 11A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL11N3LLH6

• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 2W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11099-2

Package mechanical data
8/10
DIM.
C1
D2
A1
A3
E2
F1
C
D
A
E
F
b
e
L
MIN.
0.80
0.23
2.50
1.25
0.30
PowerFLAT™ (3.3x3.3) MECHANICAL DATA
Doc ID 17755 Rev 1
0.328
1.325
0.975
mm.
TYP
0.90
0.02
0.20
0.30
0.12
3.30
2.65
3.30
1.40
0.65
MAX.
1.00
0.05
0.38
2.75
1.50
0.50
0.031
0.009
0.098
0.049
0.011
MIN.
0.0007
0.035
0.007
0.011
0.012
0.004
0.104
0.055
0.052
0.038
0.025
TYP.
inch
0.13
0.13
STL11N3LLH6
0.0019
MAX.
0.039
0.015
0.108
0.059
0.019