STL11N3LLH6 STMicroelectronics, STL11N3LLH6 Datasheet - Page 4

• Manufacturer Part Number: STL11N3LLH6
• Description: MOSFET N-CH 30V 11A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL11N3LLH6

• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 2W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11099-2

Electrical characteristics
2
4/10
Electrical characteristics
(T
Table 5.
Table 6.
Table 7.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
R
DSS
GSS
Q
oss
t
t
rss
iss
gs
gd
r
f
G
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
GS
Parameter
= 0)
Doc ID 17755 Rev 1
V
V
V
V
(see Figure 3)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
I
V
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
GS
= 250 µA, V
V
R
(see Figure 2)
=0
= 25 V, f=1 MHz,
= 15 V, I
= 4.5 V
= Max rating,
= Max rating @125 °C
= ±20 V
= V
= 10 V, I
= 4.5 V, I
DD
G
Test conditions
Test conditions
= 4.7 Ω, V
Test conditions
= 15 V, I
GS
, I
D
D
D
D
= 250 µA
GS
= 11 A
= 5.5 A
= 5.5 A
D
GS
= 5.5 A,
= 0
= 10 V
Min.
Min.
30
1
Min.
0.0084
0.006
Typ.
1690
Typ.
290
176
1.7
17
Typ.
TBD
TBD
TBD
TBD
8
6
STL11N3LLH6
0.0075
0.0095
Max.
Max.
±
Max.
100
10
1
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
Ω
µA
µA
nA
ns
ns
ns
ns
Ω
Ω
V
V