AUIRFZ48ZS International Rectifier, AUIRFZ48ZS Datasheet - Page 4

• Manufacturer Part Number: AUIRFZ48ZS
• Description: MOSFET N-CH 55V 61A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ48ZS

• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 61A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0086ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 91W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 61 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 43 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
4
100
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
4
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
1
6
4.5V
10
7
V DS = 25V
30µs PULSE WIDTH
30µs PULSE WIDTH
Tj = 25°C
8
TOP
BOTTOM
T J = 175°C
100
9
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
10
1000
100
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
60
50
40
30
20
10
0
1
0.1
0
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
10
vs. Drain Current
1
T J = 25°C
4.5V
T J = 175°C
20
10
30µs PULSE WIDTH
Tj = 175°C
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TOP
BOTTOM
V DS = 10V
100
30
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
40