AUIRFZ48ZS International Rectifier, AUIRFZ48ZS Datasheet - Page 7

• Manufacturer Part Number: AUIRFZ48ZS
• Description: MOSFET N-CH 55V 61A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ48ZS

• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 61A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0086ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 91W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 61 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 43 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
Fig 13b. Gate Charge Test Circuit
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
V DD
VCC
A
Fig 14. Threshold Voltage vs. Temperature
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
0
-75 -50 -25
25
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
50
I D = 250µA
T J , Temperature ( °C )
vs. Drain Current
0
75
25
50
100
75 100 125 150 175 200
TOP
BOTTOM 37A
125
150
I D
3.5A
4.9A
175
7