AUIRFZ48ZS International Rectifier, AUIRFZ48ZS Datasheet - Page 6

• Manufacturer Part Number: AUIRFZ48ZS
• Description: MOSFET N-CH 55V 61A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ48ZS

• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 61A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0086ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 91W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 61 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 43 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.001
70
60
50
40
30
20
10
0.01
0.1
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.10
0.05
0.01
T C , Case Temperature (°C)
Case Temperature
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
J
1
Ci= i Ri
2.5
2.0
1.5
1.0
0.5
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
i Ri
0.001
R
I D = 37A
V GS = 10V
1
R
1
2
T J , Junction Temperature (°C)
R
vs. Temperature
2
2
R
2
C
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
0.9848
0.6546
0.01
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0.000451
0.002487
i (sec)
0.1